Copper vanadate nanowires-based MIS capacitors: Synthesis, characterization, and their electrical charge storage applications

Muhammad Shahid, Ayman Nafady, Imran Shakir, Usman Ali Rana, Mansoor M. Sarfraz, Muhammad Farooq Warsi, Rafaqat Hussain, Muhammad Naeem Ashiq

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Copper vanadate (CVO) nanowires were grown on Si/SiO2 substrates by thermal annealing technique. A thin film of a CVO precursor at 550 C under an ambient atmosphere could also be prepared. The electrical properties of the nanowires embedded in the dielectrical layer were examined by capacitance-voltage (C-V) measurements. The C-V curves for Au/CVO nanowires embedded in an hafnium oxide layer/SiO2/p-Si capacitor at 298 K showed a clockwise hysteresis loop when the gate bias was swept cyclically. The hysteresis characteristics were studied further at different frequencies, which clearly indicated that the traps in the nanowires have a large charging-discharging time and thus the as-synthesized nanowires can be utilized for electrical charge storage devices. © 2013 Springer Science+Business Media Dordrecht.
Original languageEnglish (US)
JournalJournal of Nanoparticle Research
Volume15
Issue number8
DOIs
StatePublished - Jul 14 2013

ASJC Scopus subject areas

  • Bioengineering
  • Modeling and Simulation
  • Materials Science(all)
  • Atomic and Molecular Physics, and Optics
  • Chemistry(all)
  • Condensed Matter Physics

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