Controlling the morphology of solution-processed CuIn(SSe)2 absorber layers by film thickness and annealing temperature

Quyen Do, Nguyen The Manh, Luong Nguyen Dai Triet, Yura Choi, Young Woo Lee, Yonghyun Cho, Kwangjae Lee, Namchul Cho

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrated the solution-processed CuIn(S,Se)2 solar cells using a diamine/dithiol cosolvent. Compared to the traditional CIGS materials made with the Selenization process, we fabricated CISSe films without the Selenization process. The crystallinity, optical properties, and morphology of the CIGSSe films were changed by annealing temperature and film thickness. The band gap energy were found approximately 1.5 eV with the different film thickness.
Original languageEnglish (US)
Pages (from-to)126-139
Number of pages14
JournalMolecular Crystals and Liquid Crystals
Volume707
Issue number1
DOIs
StatePublished - Dec 18 2020

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