Contact transport of focused ion beam-deposited Pt to Si nanowires: From measurement to understanding

J. J. Ke*, K. T. Tsai, Y. A. Dai, J. H. He

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

The Si nanowires (NWs) were contacted by focused ion beam (FIB)-deposited Pt as the Ohmic contacts. Ultralow specific contact resistivity of 1.2 10 -6 ω-cm 2 has been measured. Due to the focused ion beam-induced amorphization of Si NWs, contact behavior is explained by diffusion theory, allowing accurate estimation of electron concentration, electron mobility, effective barrier height, and ideality factor. This study can be the guidance to correct measurement and understanding of the contact transport, which is useful for NWs device design and fabrication.

Original languageEnglish (US)
Article number053503
JournalApplied Physics Letters
Volume100
Issue number5
DOIs
StatePublished - Jan 30 2012
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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