Contact Resistance Reduction of ZnO Thin Film Transistors (TFTs) with Saw-Shaped Electrode

Woojin Park, Sohail F. Shaikh, Jungwook Min, Sang Kyung Lee, Byoung Hun Lee, Muhammad Mustafa Hussain

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We report a saw-shaped electrode architecture ZnO thin film transistor (TFT) for effectively increase channel width. Such a saw-shaped electrode has ~2 times longer contact line at the contact metal/ZnO channel junction. We experimentally observed an enhancement in the output drive current by 50% and reduction in the contact resistance by over 50%, when compared to a typical shaped electrode ZnO TFT consuming the same chip area. This performance enhancement is attributed to extension of channel width. This technique can contribute to device performance enhancement and especially reduction in the contact resistance which is a serious challenge.
Original languageEnglish (US)
Pages (from-to)325202
JournalNanotechnology
Volume29
Issue number32
DOIs
StatePublished - Jun 5 2018

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): OSR-2015-Sensors-2707, OSR2016-KKI 2880
Acknowledgements: This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. Sensor Innovation Initiative OSR-2015-Sensors-2707 and KAUST-KFUPM Special Initiative OSR2016-KKI 2880.

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