Contact behavior of focused ion beam deposited Pt on p-type Si nanowires

C. Y. Ho; S. H. Chiu; J. J. Ke; K. T. Tsai; Y. A. Dai; J. H. Hsu; M. L. Chang; Jr-Hau He

doi:10.1088/0957-4484/21/13/134008

Contact behavior of focused ion beam deposited Pt on p-type Si nanowires

C. Y. Ho, S. H. Chiu, J. J. Ke, K. T. Tsai, Y. A. Dai, J. H. Hsu, M. L. Chang, Jr-Hau He

Computer, Electrical and Mathematical Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Pt contact on p-Si nanowires (NWs) using Ga-ion-induced deposition by a focused ion beam was formed with a specific contact resistance (ρ _c ) of 1.54 × 10 ^{- 6} Ωcm ² . Ohmic behavior is caused by Ga-ion-induced amorphization of Si NWs underneath the Pt contact. A very low Schottky barrier height associated with interface states raised from Pt-amorphized Si junction and with an image force induced by the applied bias can be implemented to elucidate ultralow ρ _c . The value of ρ _c lower than that of any known contact to Si NWs demonstrates a practical method for integrating NWs in devices and circuits.

Original language	English (US)
Article number	134008
Journal	Nanotechnology
Volume	21
Issue number	13
DOIs	https://doi.org/10.1088/0957-4484/21/13/134008
State	Published - Mar 19 2010

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/21/13/134008

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title = "Contact behavior of focused ion beam deposited Pt on p-type Si nanowires",

abstract = " Pt contact on p-Si nanowires (NWs) using Ga-ion-induced deposition by a focused ion beam was formed with a specific contact resistance (ρ c ) of 1.54 × 10 - 6 Ωcm 2 . Ohmic behavior is caused by Ga-ion-induced amorphization of Si NWs underneath the Pt contact. A very low Schottky barrier height associated with interface states raised from Pt-amorphized Si junction and with an image force induced by the applied bias can be implemented to elucidate ultralow ρ c . The value of ρ c lower than that of any known contact to Si NWs demonstrates a practical method for integrating NWs in devices and circuits.",

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T1 - Contact behavior of focused ion beam deposited Pt on p-type Si nanowires

AU - Ho, C. Y.

AU - Chiu, S. H.

AU - Ke, J. J.

AU - Tsai, K. T.

AU - Dai, Y. A.

AU - Hsu, J. H.

AU - Chang, M. L.

AU - He, Jr-Hau

PY - 2010/3/19

Y1 - 2010/3/19

N2 - Pt contact on p-Si nanowires (NWs) using Ga-ion-induced deposition by a focused ion beam was formed with a specific contact resistance (ρ c ) of 1.54 × 10 - 6 Ωcm 2 . Ohmic behavior is caused by Ga-ion-induced amorphization of Si NWs underneath the Pt contact. A very low Schottky barrier height associated with interface states raised from Pt-amorphized Si junction and with an image force induced by the applied bias can be implemented to elucidate ultralow ρ c . The value of ρ c lower than that of any known contact to Si NWs demonstrates a practical method for integrating NWs in devices and circuits.

AB - Pt contact on p-Si nanowires (NWs) using Ga-ion-induced deposition by a focused ion beam was formed with a specific contact resistance (ρ c ) of 1.54 × 10 - 6 Ωcm 2 . Ohmic behavior is caused by Ga-ion-induced amorphization of Si NWs underneath the Pt contact. A very low Schottky barrier height associated with interface states raised from Pt-amorphized Si junction and with an image force induced by the applied bias can be implemented to elucidate ultralow ρ c . The value of ρ c lower than that of any known contact to Si NWs demonstrates a practical method for integrating NWs in devices and circuits.

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DO - 10.1088/0957-4484/21/13/134008

M3 - Article

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AN - SCOPUS:77949399857

VL - 21

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JF - Nanotechnology

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Contact behavior of focused ion beam deposited Pt on p-type Si nanowires

Abstract

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