Contact behavior of focused ion beam deposited Pt on p-type Si nanowires

C. Y. Ho, S. H. Chiu, J. J. Ke, K. T. Tsai, Y. A. Dai, J. H. Hsu, M. L. Chang, Jr-Hau He

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Pt contact on p-Si nanowires (NWs) using Ga-ion-induced deposition by a focused ion beam was formed with a specific contact resistance (ρ c ) of 1.54 × 10 - 6 Ωcm 2 . Ohmic behavior is caused by Ga-ion-induced amorphization of Si NWs underneath the Pt contact. A very low Schottky barrier height associated with interface states raised from Pt-amorphized Si junction and with an image force induced by the applied bias can be implemented to elucidate ultralow ρ c . The value of ρ c lower than that of any known contact to Si NWs demonstrates a practical method for integrating NWs in devices and circuits.

Original languageEnglish (US)
Article number134008
Issue number13
StatePublished - Mar 19 2010

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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