Abstract
Pt contact on p-Si nanowires (NWs) using Ga-ion-induced deposition by a focused ion beam was formed with a specific contact resistance (ρ c ) of 1.54 × 10 - 6 Ωcm 2 . Ohmic behavior is caused by Ga-ion-induced amorphization of Si NWs underneath the Pt contact. A very low Schottky barrier height associated with interface states raised from Pt-amorphized Si junction and with an image force induced by the applied bias can be implemented to elucidate ultralow ρ c . The value of ρ c lower than that of any known contact to Si NWs demonstrates a practical method for integrating NWs in devices and circuits.
Original language | English (US) |
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Article number | 134008 |
Journal | Nanotechnology |
Volume | 21 |
Issue number | 13 |
DOIs | |
State | Published - Mar 19 2010 |
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering