Contact behavior of focused ion beam deposited Pt on p-type Si nanowires

C. Y. Ho; S. H. Chiu; J. J. Ke; K. T. Tsai; Y. A. Dai; J. H. Hsu; M. L. Chang; Jr-Hau He

doi:10.1088/0957-4484/21/13/134008

Contact behavior of focused ion beam deposited Pt on p-type Si nanowires

C. Y. Ho, S. H. Chiu, J. J. Ke, K. T. Tsai, Y. A. Dai, J. H. Hsu, M. L. Chang, Jr-Hau He

Computer, Electrical and Mathematical Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Pt contact on p-Si nanowires (NWs) using Ga-ion-induced deposition by a focused ion beam was formed with a specific contact resistance (ρ _c ) of 1.54 × 10 ^{- 6} Ωcm ² . Ohmic behavior is caused by Ga-ion-induced amorphization of Si NWs underneath the Pt contact. A very low Schottky barrier height associated with interface states raised from Pt-amorphized Si junction and with an image force induced by the applied bias can be implemented to elucidate ultralow ρ _c . The value of ρ _c lower than that of any known contact to Si NWs demonstrates a practical method for integrating NWs in devices and circuits.

Original language	English (US)
Article number	134008
Journal	Nanotechnology
Volume	21
Issue number	13
DOIs	https://doi.org/10.1088/0957-4484/21/13/134008
State	Published - Mar 19 2010

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1088/0957-4484/21/13/134008

Fingerprint Dive into the research topics of 'Contact behavior of focused ion beam deposited Pt on p-type Si nanowires'. Together they form a unique fingerprint.

Cite this

@article{297ba99515104f5da60c80b74952c0cd,

title = "Contact behavior of focused ion beam deposited Pt on p-type Si nanowires",

abstract = " Pt contact on p-Si nanowires (NWs) using Ga-ion-induced deposition by a focused ion beam was formed with a specific contact resistance (ρ c ) of 1.54 × 10 - 6 Ωcm 2 . Ohmic behavior is caused by Ga-ion-induced amorphization of Si NWs underneath the Pt contact. A very low Schottky barrier height associated with interface states raised from Pt-amorphized Si junction and with an image force induced by the applied bias can be implemented to elucidate ultralow ρ c . The value of ρ c lower than that of any known contact to Si NWs demonstrates a practical method for integrating NWs in devices and circuits.",

author = "Ho, {C. Y.} and Chiu, {S. H.} and Ke, {J. J.} and Tsai, {K. T.} and Dai, {Y. A.} and Hsu, {J. H.} and Chang, {M. L.} and Jr-Hau He",

year = "2010",

month = mar,

day = "19",

doi = "10.1088/0957-4484/21/13/134008",

language = "English (US)",

volume = "21",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing",

number = "13",

}

TY - JOUR

T1 - Contact behavior of focused ion beam deposited Pt on p-type Si nanowires

AU - Ho, C. Y.

AU - Chiu, S. H.

AU - Ke, J. J.

AU - Tsai, K. T.

AU - Dai, Y. A.

AU - Hsu, J. H.

AU - Chang, M. L.

AU - He, Jr-Hau

PY - 2010/3/19

Y1 - 2010/3/19

N2 - Pt contact on p-Si nanowires (NWs) using Ga-ion-induced deposition by a focused ion beam was formed with a specific contact resistance (ρ c ) of 1.54 × 10 - 6 Ωcm 2 . Ohmic behavior is caused by Ga-ion-induced amorphization of Si NWs underneath the Pt contact. A very low Schottky barrier height associated with interface states raised from Pt-amorphized Si junction and with an image force induced by the applied bias can be implemented to elucidate ultralow ρ c . The value of ρ c lower than that of any known contact to Si NWs demonstrates a practical method for integrating NWs in devices and circuits.

AB - Pt contact on p-Si nanowires (NWs) using Ga-ion-induced deposition by a focused ion beam was formed with a specific contact resistance (ρ c ) of 1.54 × 10 - 6 Ωcm 2 . Ohmic behavior is caused by Ga-ion-induced amorphization of Si NWs underneath the Pt contact. A very low Schottky barrier height associated with interface states raised from Pt-amorphized Si junction and with an image force induced by the applied bias can be implemented to elucidate ultralow ρ c . The value of ρ c lower than that of any known contact to Si NWs demonstrates a practical method for integrating NWs in devices and circuits.

UR - http://www.scopus.com/inward/record.url?scp=77949399857&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/21/13/134008

DO - 10.1088/0957-4484/21/13/134008

M3 - Article

C2 - 20208118

AN - SCOPUS:77949399857

VL - 21

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 13

M1 - 134008

ER -

Contact behavior of focused ion beam deposited Pt on p-type Si nanowires

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this