Computational fluid dynamics on gaseous and surface chemistry of GaN-MOVPE system for various pressures

K. Kusakabe, A. Hirako, S. Tanaka, Kazuhiro Ohkawa*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Pressure effects on gaseous and surface chemistry of GaN grown by metalorganic vapor phase epitaxy (MOVPE) were studied. In order to obtain a chemical state of molecular species in an MOVPE reactor, computational fluid dynamics simulation was performed for 10 to 300 kPa, in which parasitic reactions among trimethylgallium and ammonia were considered. It was found that adducts of the dimethylgallium-NH2 family related to Ga-N molecule formation dominated reaction pathways. It was also revealed that a V/III ratio of physisorbed species was increased 2 orders of magnitude and close to a unity with the reactor pressure. These results suggested that MOVPE growth under atmospheric or higher pressures resulted in favourable growth conditions for high quality GaN.

Original languageEnglish (US)
Pages (from-to)2569-2572
Number of pages4
JournalPhysica Status Solidi C: Conferences
Volume1
Issue number10
DOIs
StatePublished - Nov 9 2004

ASJC Scopus subject areas

  • Condensed Matter Physics

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