Comprehensive uniformity analysis of gaAs-based VCSEL epiwafer by utilizing the on-wafer test capability

Mohd Sharizal Bin Alias, Sahbudin Shaari, P. K. Choudhury, Sufian Mitani

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A comprehensive study of the uniformity of 850 nm VCSEL epiwafer grown by the MOCVD technique is presented. By utilizing the VCSEL planar structure, uniformity test is performed on-wafer directly, besides using the conventional photoluminescence technique. The VCSEL quantum wells are found to exhibit a peak emission wavelength of 839.5 nm. Also, the grown epiwafer is observed to exhibit a Fabry-Perot cavity resonance at 846.5 nm. Various VCSEL devices fabricated from the center to the edge of the VCSEL epiwafer show a similar trend towards the light-current and output spectral characteristics. However, the device existing near the epiwafer edge is observed to exhibit significantly different characteristics, which is attributed to the physical conditions of the device near the edge, and also the limitations of the epitaxial growth.

Original languageEnglish (US)
Pages (from-to)368-375
Number of pages8
JournalJournal of Russian Laser Research
Volume30
Issue number4
DOIs
StatePublished - Oct 1 2009

Keywords

  • III-V compounds
  • Optoelectronic devices
  • Quantum-well devices
  • VCSELS

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Engineering (miscellaneous)

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