Comprehensive electro-optical analysis of long wavelength GaInNAs edge-emitting laser diode

Mohd Sharizal Bin Alias*, S. M. Mitani, F. Maskuriy

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Comprehensive analysis of GaInNAs edge-emitting laser operating near 1300 nm wavelength are made to underline the behavioural features of the proposed laser device, in view of the analytical investigation for various material and device electrical-optical parameters analysis such as band diagram, material gain, quantum well emission wavelength, optical wave and mode profiles, light-current-voltage characteristic, output mode spectrum, current distribution and far-field profile. The material analysis indicates that a high quality GaInNAs active region is designed, where high material gain and photoluminescence wavelength near 1.3 μm are achieved. The device obtains low threshold current operation with lasing emission around 1.285 μm.

Original languageEnglish (US)
Pages (from-to)1051-1055
Number of pages5
JournalOptik
Volume123
Issue number12
DOIs
StatePublished - Jun 1 2012

Keywords

  • Edge emitting laser
  • GaInNAs
  • Semiconductor laser

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Comprehensive electro-optical analysis of long wavelength GaInNAs edge-emitting laser diode'. Together they form a unique fingerprint.

Cite this