Comprehensive analysis of GaInNAs edge-emitting laser operating near 1300 nm wavelength are made to underline the behavioural features of the proposed laser device, in view of the analytical investigation for various material and device electrical-optical parameters analysis such as band diagram, material gain, quantum well emission wavelength, optical wave and mode profiles, light-current-voltage characteristic, output mode spectrum, current distribution and far-field profile. The material analysis indicates that a high quality GaInNAs active region is designed, where high material gain and photoluminescence wavelength near 1.3 μm are achieved. The device obtains low threshold current operation with lasing emission around 1.285 μm.
- Edge emitting laser
- Semiconductor laser
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering