Compound-source molecular beam epitaxy for ZnCdSe/ZnSSe/ZnMgSSe laser structure

Kazuhiro Ohkawa, Shigeo Yoshii, Hidemi Takeishi, Ayumu Tsujimura, Shigeo Hayashi, Takeshi Karasawa, Tsuneo Mitsuyu

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

We have developed compound-source molecular beam epitaxy (CSMBE) for ZnSe-based laser diodes. The CSMBE technique employs compound sources instead of elemental sources, and can reduces the number of growth parameters. Continuous-wave operation at room temperature of ZnCdSe/ZnSSe/ZnMgSSe laser diodes grown by CSMBE has been demonstrated. The threshold current was 68 mA for a gain-guided device 5 μm wide and 750 μm long.

Original languageEnglish (US)
Pages (from-to)L1673-L1675
JournalJapanese Journal of Applied Physics
Volume33
Issue number12 A
DOIs
StatePublished - Jan 1 1994

Keywords

  • Compound source
  • II—VI compounds
  • MBE
  • Semiconductor laser
  • ZnMgSSe

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Compound-source molecular beam epitaxy for ZnCdSe/ZnSSe/ZnMgSSe laser structure'. Together they form a unique fingerprint.

Cite this