Compound source molecular beam epitaxy for II-VI laser structures

K. Ohkawa*, A. Tsujimura, T. Nishikawa, S. Yoshii, T. Yokogawa, M. Kubo, Y. Sasai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Compound source molecular beam epitaxy (CSMBE) for II-VI laser structures is developed. This method employs compounds as source materials instead of elements. The surface of ZnSe during CSMBE at 100-350°C is Se-stabilized, in spite of the VI/II ratio of unity. Study of defects observed on ZnCdSe/ZnSSe/ZnMgSSe laser structures indicates that defects are pairs of the stacking faults which form an unique hillock. The composition modulation was not observed for ZnMgSSe layers grown by CSMBE. These results are owing to hot and group-VI diatomic molecular beam generated from compound sources.

Original languageEnglish (US)
Pages (from-to)632-635
Number of pages4
JournalJournal of Crystal Growth
Volume159
Issue number1-4
StatePublished - Feb 1996
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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