Composition dependence of the work function of Ta1-xAl xNymetal gates

Husam Niman Alshareef*, K. Choi, H. C. Wen, H. Luan, H. Harris, Y. Senzaki, P. Majhi, B. H. Lee, R. Jammy, S. Aguirre-Tostado, B. E. Gnade, R. M. Wallace

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

It is shown that the work function of Ta1-x Alx Ny depends on the electrode and gate dielectric compositions. Specifically, the work function of Ta1-x Alx Ny increased with Si O2 content in the gate dielectric, reaching as high as 5.0 eV on Si O2; the work function was nearly 400 mV smaller on Hf O2. In addition, the work function decreased with increasing nitrogen content in the Ta1-x Alx Ny metal gate. Increasing Al concentration increased the work function up to about 15% Al, but the work function decreased for higher Al concentrations. Chemical analysis shows that Al-O bonding at the interface correlates with the observed work function values.

Original languageEnglish (US)
Article number072108
JournalApplied Physics Letters
Volume88
Issue number7
DOIs
StatePublished - Feb 24 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Composition dependence of the work function of Ta<sub>1-x</sub>Al <sub>x</sub>N<sub>y</sub>metal gates'. Together they form a unique fingerprint.

Cite this