Complementing trends of photoluminescence and terahertz intensities in staggered InGaN quantum wells

Guan Sun*, Ruolin Chen, Yujie J. Ding, Hongping Zhao, Guangyu Liu, Jing Zhang, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We demonstrate that photoluminescence and terahertz intensities show complementing trends for staggered InGaN quantum wells (QWs), dictated by separation of electrons and holes.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2013
StatePublished - Nov 18 2013
EventCLEO: Science and Innovations, CLEO_SI 2013 - San Jose, CA, United States
Duration: Jun 9 2013Jun 14 2013

Publication series

NameCLEO: Science and Innovations, CLEO_SI 2013

Other

OtherCLEO: Science and Innovations, CLEO_SI 2013
CountryUnited States
CitySan Jose, CA
Period06/9/1306/14/13

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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