Compensated readout of a memristor array, a memristor array readout circuit, and method of fabrication thereof

Mohammed A. Zidan (Inventor), Hesham Omran (Inventor), Ahmed Sultan Salem (Inventor), Khaled N. Salama (Inventor)

Research output: Patent

Abstract

A method for readout of a gated memristor array, a memristor array readout circuit and method of fabrication thereof are provided. In the context of the method, the method includes selecting a row of a memristor array associated with a desired cell, measuring the value of the selected memristor row, and selecting a column of a memristor array associated with the desired cell. The selection of the column and selection of the row selects the desired cell. The method also includes measuring the value of the memristor selected row with the selected desired cell and determining the value of the desired cell based on the value of the selected memristor row and the value of the selected memristor row with the selected desired cell.
Original languageEnglish (US)
Patent numberUS20180166134A1
StatePublished - Jun 14 2018

Bibliographical note

KAUST Repository Item: Exported on 2019-02-13

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