Comparison of uniaxial wafer bending and contact-etch-stop-liner stress induced performance enhancement on double-gate FinFETs

Sagar Suthram*, Muhammad Mustafa Hussain, H. R. Harris, C. Smith, H. H. Tseng, R. Jammy, S. E. Thompson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Longitudinal piezoresistance (π) coefficients for n- and p-type double-gate (DG) FinFETs with sidewall channels along (110) surface and 〈110〉 channel direction are measured via wafer-bending experiments (51.4 and -37 × 10 -11 Pa -1 for n- and p-FinFETs, respectively) and are found to differ from bulk Si (110) (31.2 and -71.8 × 10 -11 Pa -1 for n- and p-Si, respectively). Compressive and tensile contact-etch-stop liners (CESLs) are fabricated on DG FinFETs and are found to induce higher channel stress than in planar MOSFETs, with 30% enhancement in the saturation current for the shortest channel-length devices in both n- and p-MOSFETs, whereas the long devices show little or no enhancement. The channel-length dependence of the enhancement suggests that stress coupling into the FinFET channels from the CESL occurs via the fin extensions and not through the gate.

Original languageEnglish (US)
Pages (from-to)480-482
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number5
DOIs
StatePublished - May 1 2008

Keywords

  • Contact-etch-stop liners (CESLs)
  • FinFET
  • Piezoresistance
  • Wafer bending and strain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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