Comparison of nitrogen compositions in the as-grown GaNxAs 1-x on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy

W. J. Fan, S. F. Yoon, Tien Khee Ng, S. Z. Wang, W. K. Loke, R. Liu, A. Wee

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66 Scopus citations

Abstract

High-resolution x-ray diffraction (HRXRD) and secondary-ion mass spectroscopy were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that N compositions measured by the two methods agree well at lower N compositions (x<3%), and deviate at larger N compositions (x>3%). The HRXRD measurement by using Vegard's law to extract the lattice constant of GaNAs, underestimates N composition at larger N compositions. We found that the underestimation is up to 14.3% at the x=4.2%. In order to explain the deviation, a model for analyzing the correlation between lattice parameters and point defects in the epilayer was carried out.

Original languageEnglish (US)
Pages (from-to)4136-4138
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number22
DOIs
StatePublished - Jun 3 2002

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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