Comparison of MOSFET characteristics between ALD and MOCVD TIN metal gate on Hf silicate

S. C. Song*, B. H. Lee, Z. Zhang, K. Choi, S. H. Bae, Husam Niman Alshareef, P. Majhi, H. C. Wen, J. Bennett, B. Sassman, P. Zeitzoff

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

In this report, MOSFET characteristics between ALD (Atomic Layer Deposition) and CVD (Chemical Vapor Deposition) TiN metal gate on high-k dielectric are compared. Despite many similarities between these two techniques, we found clear differences in device characteristics, such as EOT, mobility, dopant diffusion, and defect generation during deposition. ALD TiN results in thicker EOT due to higher process temperature compared to CVD TiN, but has stonger resistnace to dopant diffusion and provides better interfacial characteristics, thus better device performance.

Original languageEnglish (US)
Pages419-424
Number of pages6
StatePublished - Dec 1 2005
Event207th ECS Meeting - Quebec, Canada
Duration: May 16 2005May 20 2005

Other

Other207th ECS Meeting
CountryCanada
CityQuebec
Period05/16/0505/20/05

ASJC Scopus subject areas

  • Engineering(all)

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