Combined optical, surface and nuclear microscopic assessment of porous silicon formed in HF-acetonitrile

Z. C. Feng*, Z. Chen, K. R. Padmanabhan, Kun Li, A. T.S. Wee, J. Lin, K. L. Tan, K. T. Yue, A. Bhat, A. Rohatgi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

A new type of HF solution, HF-acetonitrile (MeCN), has been employed to produce 10-30 μm thick porous silicon (P-Si) layers by photoelectrochemical etching of different types of Si wafers, Si(100), Si(111) and polycrystalline Si, with different resistivities. A combined optical, surface and nuclear microscopic assessment of these P-Si layers was performed using photoluminescence (PL), Raman scattering, X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectroscopy (RBS). The PL emission intensities, Raman line shapes and structural features are strongly dependent on the properties of the substrates such as the crystallinity and resistivity of the Si wafers used for forming P-Si. With increasing resisitivity of the Si(100) wafers, the resulting P-Si layers show a slight blue-shift of their visible light emission peak energy, an up-shift of the peak position and a narrowing of the band width of the dominant Raman band, and a decrease in the amount of residual elemental Si on the surface. Those Si(111) wafers, etched in HF-MeCN, showed no porous structures and no visible light emission.

Original languageEnglish (US)
Pages (from-to)345-350
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume358
StatePublished - Jan 1 1995
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 28 1994Nov 30 1994

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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