Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses

Y. Shi, C. Pan, V. Chen, N. Raghavan, K. L. Pey, F. M. Puglisi, E. Pop, H. S.P. Wong, M. Lanza

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

We present the first fabrication of electronic synapses using two dimensional (2D) hexagonal boron nitride (/j-BN) as active switching layer. The main advantage of these devices compared to the transition metal oxide (TMO) based counterparts is that multilayer h-BN stacks show both volatile and non-volatile resistive switching (RS) depending on the programming stresses applied, which allows implementing short-term (STP) and long-term plasticity (LTP) rules using a single device and without the need of complex architectures.
Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages5.4.1-5.4.4
Number of pages1
ISBN (Print)9781538635599
DOIs
StatePublished - Jan 23 2018
Externally publishedYes

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