Co-doped TiO2 epitaxial thin films grown by sputtering

G. C. Han*, P. Luo, Zaibing Guo, Fiaz Un Nahar, M. Tay, Y. H. Wu, S. J. Wang

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    17 Scopus citations

    Abstract

    Co-doped TiO2 anatase thin films were epitaxially grown by sputtering. It is found that the films have good epitaxial structure and contain single anatase phase. Co in the films is in + 2 oxidation state. However, there are also pure metal Co clusters on the film surface. Saturation moments (m s) of films are found to be independent of carrier density, which implies that the carriers are unimportant for the ferromagnetism in these Co-doped TiO2 anatase films. Neither an anomalous Hall effect nor a characteristic magnetoresistance are observed even at a temperature down to 2.2 K, which indicates that Co-doped anatase films may not be an intrinsic magnetic semiconductor.

    Original languageEnglish (US)
    Pages (from-to)137-140
    Number of pages4
    JournalThin Solid Films
    Volume505
    Issue number1-2
    DOIs
    StatePublished - May 18 2006

    Keywords

    • Anatase
    • Epitaxial growth
    • Magnetism
    • Sputtering
    • Titanium oxide

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Materials Chemistry

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