CMOS IMPATT impedance and design parameters for millimetre-wave applications

Husain Kamal*, Talal Al Attar

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

This article describes lateral CMOS IMPATT diodes designed, monolithically integrated and fabricated in 0.18 μm CMOS technology. IMPATT diode impedance and avalanche frequency were confirmed in a measurement from 40 MHz to 110 GHz. Avalanche tuning range measured from 24 GHz to 44 GHz with maximum IMPATT negative resistance of 120 Ω at 38 GHz with 28 mA bias current. Furthermore, selection of the process technology and the impact of n-well impurity concentration are discussed. This device showed wide tuning range in the millimetre wave range and with the low cost of the CMOS technology used, these devices appear well suited for use in millimetre-wave applications.

Original languageEnglish (US)
Pages (from-to)1046-1061
Number of pages16
JournalInternational Journal of Electronics
Volume100
Issue number8
DOIs
StatePublished - Aug 1 2013

Keywords

  • GSG
  • IMPATT
  • avalanche frequency
  • co-planar waveguide
  • voltage controlled oscillator

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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