CMOS diodes operating beyond avalanche frequency

Talal Al Attar*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

This paper describes IMPATT diodes designed and fabricated in 0.25m CMOS technology to operate beyond avalanche frequency. IMPATT Impedance measurements from 40MHz to 110GHz confirmed avalanche frequency range from 30GHz to 55GHz and negative resistance tuning range from 30GHz to 80GHz. G&H model is verified and the impact of different device parameters are presented

Original languageEnglish (US)
Title of host publicationProceedings of the 12th International Symposium on Quality Electronic Design, ISQED 2011
Pages332-337
Number of pages6
DOIs
StatePublished - Jun 22 2011
Event12th International Symposium on Quality Electronic Design, ISQED 2011 - Santa Clara, CA, United States
Duration: Mar 14 2011Mar 16 2011

Publication series

NameProceedings of the 12th International Symposium on Quality Electronic Design, ISQED 2011

Other

Other12th International Symposium on Quality Electronic Design, ISQED 2011
CountryUnited States
CitySanta Clara, CA
Period03/14/1103/16/11

Keywords

  • Avalanche Frequency
  • CMOS
  • CPW
  • GSG
  • IMPATT

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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