CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric

Mohamed T. Ghoneim, Amir Hanna, Muhammad Mustafa Hussain

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Commercialization of flexible electronics requires reliable, high performance, ultra-compact and low power devices. To achieve them, we fabricate traditional electronics on bulk mono-crystalline silicon (100) and transform the top portion into an ultra-thin flexible silicon fabric with prefabricated devices, preserving ultra-large-scale-integration density and same device performance. This can be done in a cost effective manner due to its full compatibility with standard CMOS processes. In this paper, using the same approach, for the first time we demonstrate a ferroelectric random access memory (FeRAM) cell on flexible silicon fabric platform and assess its functionality and practical potential.
Original languageEnglish (US)
Title of host publication14th IEEE International Conference on Nanotechnology
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages448-451
Number of pages4
ISBN (Print)9781479956227
DOIs
StatePublished - Aug 2014

Fingerprint Dive into the research topics of 'CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric'. Together they form a unique fingerprint.

Cite this