Cleaning Challenges of High-κ/Metal Gate Structures

Muhammad Mustafa Hussain, Denis G. Shamiryan, Vasile Paraschiv, Kenichi Sano, Karen A. Reinhardt

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Scopus citations

Abstract

High-κ/metal gates are used as transistors for advanced logic applications to improve speed and eliminate electrical issues associated with polySi and SiO2 gates. Various integration schemes are possible and will be discussed, such as dual gate, gate-first, and gate-last, both of which require specialized cleaning and etching steps. Specific areas of discussion will include cleaning and conditioning of the silicon surface, forming a high-quality chemical oxide, removal of the high-κ dielectric with selectivity to the SiO2 layer, cleaning and residue removal after etching, and prevention of galvanic corrosion during cleaning. © 2011 Scrivener Publishing LLC. All rights reserved.
Original languageEnglish (US)
Title of host publicationHandbook of Cleaning in Semiconductor Manufacturing
PublisherWiley
Pages237-284
Number of pages48
ISBN (Print)9780470625958
DOIs
StatePublished - Feb 22 2011

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