Chemical vapor deposition based tungsten disulfide (WS2) thin film transistor

Aftab M. Hussain, Galo T. Sevilla, Kelly Rader, Muhammad Mustafa Hussain

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

Tungsten disulfide (WS2) is a layered transition metal dichalcogenide with a reported band gap of 1.8 eV in bulk and 1.32-1.4 eV in its thin film form. 2D atomic layers of metal dichalcogenides have shown changes in conductivity with applied electric field. This makes them an interesting option for channel material in field effect transistors (FETs). Therefore, we show a highly manufacturable chemical vapor deposition (CVD) based simple process to grow WS2 directly on silicon oxide in a furnace and then its transistor action with back gated device with room temperature field effect mobility of 0.1003 cm2/V-s using the Schottky barrier contact model. We also show the semiconducting behavior of this WS2 thin film which is more promising than thermally unstable organic materials for thin film transistor application. Our direct growth method on silicon oxide also holds interesting opportunities for macro-electronics applications. © 2013 IEEE.
Original languageEnglish (US)
Title of host publication2013 Saudi International Electronics, Communications and Photonics Conference
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISBN (Print)9781467361958
DOIs
StatePublished - Apr 2013

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