Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant

Hirofumi Matsuoka, Kaito Kanahashi, Naoki Tanaka, Yoshiaki Shoji, Lain-Jong Li, Jiang Pu, Hiroshi Ito, Hiromichi Ohta, Takanori Fukushima, Taishi Takenobu

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Hole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes2B+ (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C6F5)4B]−, can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe2) films. Upon doping, the sheet resistance of large-area polycrystalline WSe2 monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq.
Original languageEnglish (US)
Pages (from-to)02CB15
JournalJapanese Journal of Applied Physics
Volume57
Issue number2S2
DOIs
StatePublished - Jan 18 2018

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