Charge transfer of n-type GaN photoelectrolysis in HCl solution for H 2 gas generation at a counterelectrode

Katsushi Fujii*, Masato Ono, Takashi Ito, Kazuhiro Ohkawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In order to clarify the charge transfer characteristics for H2 generation, photoelectrochemical properties of n-type GaN in HCl solution were investigated. The fiatband potential under illumination and the onset voltages of photocurrent located approximately the same position. From the result, we concluded that the positively charged surface by hole capture is the main reason of the extra voltage requirement for H2 generation. The carrier concentration in n-type GaN also affects the photocurrent.

Original languageEnglish (US)
Pages (from-to)279-284
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume885
StatePublished - 2006
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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