In order to clarify the charge transfer characteristics for H2 generation, photoelectrochemical properties of n-type GaN in HCl solution were investigated. The fiatband potential under illumination and the onset voltages of photocurrent located approximately the same position. From the result, we concluded that the positively charged surface by hole capture is the main reason of the extra voltage requirement for H2 generation. The carrier concentration in n-type GaN also affects the photocurrent.
|Original language||English (US)|
|Number of pages||6|
|Journal||Materials Research Society Symposium Proceedings|
|State||Published - 2006|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials