Charge storage in carbon nanotube field-effect transistors

Hong Li, Qing Zhang*, Jingqi Li

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Very significant hysteresis characteristics are found in single wall carbon nanotubes field-effect transistors (CNTFET) fabricated using AC dielectrophoresis method. The CNTFETs show ambipolar characteristics. Two clear hysteresis loops are observed when the gate voltage is forward and backward swept. The hysteresis characteristics are studied from room temperature down to 16 K. It is found that the hysteresis loops become smaller as temperature is decreased. We suggested that the hysteresis is caused by charge trapping in foreign species covering the single wall carbon nanotube. It is more difficult for charges to transfer into and out of the trapping center at a lower temperature; as a result, the hysteresis loops become much smaller at low temperature.

    Original languageEnglish (US)
    Pages (from-to)553-557
    Number of pages5
    JournalInternational Journal of Nanoscience
    Volume5
    Issue number4-5
    StatePublished - Aug 1 2006

    Keywords

    • Carbon nanotube
    • Charge trapping
    • Hysteresis

    ASJC Scopus subject areas

    • Biotechnology
    • Bioengineering
    • Materials Science(all)
    • Condensed Matter Physics
    • Computer Science Applications
    • Electrical and Electronic Engineering

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