Charge injection from indium-tin-oxide into a starburst amine and its implications for organic light-emitting diodes

Homer Antoniadis, Carsten Giebeler, Donal D.C. Bradley, Yasuhiko Shirota

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

We have investigated the hole injection characteristics from indium tin oxide (ITO) into 4,4′,4″-tris {N,-(3-methylphenyl)-N-phenylamino} triphenylamine (m-MTDATA) and have measured the hole carrier drift mobility of this compound in single-layer ITO/m-MTDATA/Au structures. We have found that ITO is able to provide trap-free space-charge-limited currents over a wide range of film thicknesses and have established unambiguously that the ITO/m-MTDATA is an ideal ohmic contact at high electric fields. The drift mobility of the m-MTDATA molecular glass was found to be electric field dependent and a negative field dependence was detected at fields lower than 1×105 V/cm. Our observations clarify the role of m-MTDATA as a voltage-lowering hole-injecting buffer layer in organic light-emitting diodes.
Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIEBellingham, WA, United States
StatePublished - Dec 1 1998
Externally publishedYes

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