Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer

Tzu Chun Lu, Min Yung Ke, Sheng Chieh Yang, Yun Wei Cheng, Liang Yi Chen, Guan Jhong Lin, Yu Hsin Lu, Jr Hau He, Hao Chung Kuo, Jian Jang Huang

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen MgO defects.

Original languageEnglish (US)
Pages (from-to)4109-4111
Number of pages3
JournalOptics Letters
Volume35
Issue number24
DOIs
StatePublished - Dec 15 2010
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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