Characterizations of low-temperature electroluminescence from n-ZnO Nanowire/ p-GaN light emitting diodes

Tzu Chun Lu, Min Yung Ke, Sheng Chieh Yang, Yun Wei Cheng, Liang Yi Chen, Guan Jhong Lin, Yu Hsin Lu, H. He, Hao Chung Kuo, JianJang Huang*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Low temperature electroluminescence (EL) from a ZnO nanowire light emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p- GaN, high purity UV (ultra-violet) light emission at wavelength 398nm was obtained. As the temperature is decreased, contrary to the typical GaN based light emitting didoes (LEDs), our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen of MgO defects.

Original languageEnglish (US)
Title of host publication2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011
StatePublished - 2011
Externally publishedYes
Event2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011 - Palm Springs, CA, United States
Duration: May 16 2011May 19 2011

Other

Other2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011
CountryUnited States
CityPalm Springs, CA
Period05/16/1105/19/11

Keywords

  • Low-temperature electroluminescence
  • UV LED
  • ZnO nanowire

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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