Characterization of the blue emission of Tm/Er co-implanted GaN

I. S. Roqan*, C. Trager-Cowan, B. Hourahine, K. Lorenz, E. Nogales, K. P. O'Donnell, R. W. Martin, E. Alves, S. Ruffenach, O. Briot

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

Comparative studies have been carried out on the cathodoluminescence (CL) and photoluminescence (PL) properties of GaN implanted with Tm and GaN co-implanted with Tm and a low concentration of Er. Room temperature CL spectra were acquired in an electron probe microanalyser to investigate the rare earth emission. The room temperature CL intensity exhibits a strong dependence on the annealing temperature of the implanted samples. The results of CL temperature dependence are reported for blue emission (∼ 477 nm) which is due to intra 4f -shell electron transitions (1G43H6) associated with Tm3+ ions. The 477 nm blue CL emission is enhanced strongly as the annealing temperature increases up to 1200°C. Blue PL emission has also been observed from the sample annealed at 1200°C. To our knowledge, this is the first observation of blue PL emission from Tm implanted GaN samples. Intra-f transitions from the 1D 2 level (∼ 465 nm emission lines) of Tm3+ ions in GaN have been observed in GaN:Tm films at temperatures between 20-200 K. We will discuss the temperature dependent Tm3+ emission in both GaN:Tm,Er and GaN:Tm samples.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages599-604
Number of pages6
Volume892
StatePublished - 2006
Externally publishedYes
Event2005 Materials Research Society Fall Meeting - Boston, MA, United States
Duration: Nov 28 2005Dec 2 2005

Other

Other2005 Materials Research Society Fall Meeting
CountryUnited States
CityBoston, MA
Period11/28/0512/2/05

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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