Characterization of reactive ion etching of sol-gel SiO2 using Taguchi optimization method

Terence C.L. Wee*, Boon Ooi, Yan Zhou, Yuen Chuen Chan, Yee Loy Lam

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

SiO2 films prepared using sol-gel technique have found enormous potential applications in photonics, electronics and sensor devices. However, the feasibility of the devices utilizing sol-gel technology lies on the ease of the fabrication processes such as patterns transfer using wet or dry etchings. Dry etching is preferred over wet etching as it is able to produce finer features with high anisotropic etch profile. In this paper, we report the development of a dry reactive ion etching (RIE) process for sol-gel SiO2 using a mixture of CF4 and O2 plasma. Parameters such as RF power, chamber pressure, CF4 and O2 flow rate, were optimized using a statistical method called Taguchi Technique. Etch rate of as high as 50nm/min, with high anisotropy etched profile, has been obtained.

Original languageEnglish (US)
Pages (from-to)438-444
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3896
StatePublished - Dec 1 1999
EventProceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices - Singapore, Singapore
Duration: Nov 30 1999Dec 3 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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