Characterization of Planar Antennas Fabricated on GaAs Epilayers Containing As Clusters for Picosecond Short-Pulse Applications

Lawrence Carin, David R. Kralij, Jerry M. Woodall, Michael R. Melloch

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Coplanar-strip horn antennas are fabricated on GaAs grown by molecular beam epitaxy at substrate temperatures of 220, 250, and 270° C. These antennas are switched photo conductively using a picosecond laser to generate and detect freely propagating bursts of electromagnetic radiation. The dependence of the antenna performance on substrate growth temperature is assessed and is also compared with the performance of like antennas fabricated on oxygen-bombarded silicon on sapphire. It is shown that in our picosecond measurements the radiated pulse duration is not very sensitive to substrate growth temperature but the radiated intensity is highly sensitive to this parameter. © 1993 IEEE
Original languageEnglish (US)
Pages (from-to)339-341
Number of pages3
JournalIEEE Microwave and Guided Wave Letters
Volume3
Issue number9
DOIs
StatePublished - Jan 1 1993
Externally publishedYes

Fingerprint Dive into the research topics of 'Characterization of Planar Antennas Fabricated on GaAs Epilayers Containing As Clusters for Picosecond Short-Pulse Applications'. Together they form a unique fingerprint.

Cite this