Characterization of lattice mosaic of a-plane GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy

K. Kusakabe*, S. Ando, K. Ohkawa

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Nonpolar a-plane GaN films were grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The as-grown layers were studied by high-resolution x-ray diffraction. The a-plane GaN lattice mosaic is orientation dependent as determined by x-ray rocking curve (XRC) measurements. The tilt mosaic measured with the c-axis within the scattering plane (c-mosaic) was greater than the mosaic measured with the m-axis within the scattering plane (m-mosaic). The mosaic along both azimuths decreased and the c-mosaic/m-mosaic ratio was increased with increase of growth temperature from 1050°C to 1080°C. The morphological transition was correlated to change in the a-plane GaN tilt mosaic measured by XRC.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages659-663
Number of pages5
Volume892
StatePublished - 2006
Externally publishedYes
Event2005 Materials Research Society Fall Meeting - Boston, MA, United States
Duration: Nov 28 2005Dec 2 2005

Other

Other2005 Materials Research Society Fall Meeting
CountryUnited States
CityBoston, MA
Period11/28/0512/2/05

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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