Characterization of InGaN/GaN Fibonacci superlattices grown by two-flow metalorganic vapor phase epitaxy

K. Kusakabe*, Kazuhiro Ohkawa

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

A quasiperiodic system of InGaN/GaN superlattices, grown by two-flow metalorganic vapor phase epitaxy on sapphire substrates, was investgated for the first time. The superlattice structure consisted of an alternative stack of InGaN and GaN thin films to form a Fibonacci sequence. In the X-ray ω-2θ (0002) spectrum, many diffracted satellite peaks from Fibonacci superlattices were observed, but not Bragg-like ones, which resulted from the no-periodicity feature of Fibonacci superlattices. It was found that satellite peaks are characterized as a fractal behavior. And it was considered that moderately large interface fractuation in the sequential deposition of the superlattice does not appear to disturbe the quasiperiodic order of Fibonaci InGaN/GaN superlattices.

Original languageEnglish (US)
Pages (from-to)2120-2123
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
DOIs
StatePublished - Dec 1 2003
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: May 25 2003May 30 2003

ASJC Scopus subject areas

  • Condensed Matter Physics

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