Characterization of GaAs grown on SiGe/Si graded substrates using p-n junction diodes

K. P. Chen, S. F. Yoon, Tien Khee Ng, H. Tanoto, K. L. Lew, C. L. Dohrman, E. A. Fitzgerald

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The effect of GaAs buffer thickness on the electrical characteristics of a p+ - n- junction diode is presented. The GaAs diodes are grown on a Ge/graded Six Ge1-x /Si virtual substrate. Electrical characterization and visual observation provided vital insights into the origin of improvement in the electrical characteristics of the diode as the GaAs buffer thickness is increased. A high breakdown voltage of -9.2 V was achieved as the buffer thickness was increased from 50 to 600 nm, as the ideality factor reduces from 2.2 to 1.7, indicating reduction in the recombination current in the depletion region. This improvement is found to be related to the suppression mechanism of the wedge-shaped dislocation formation in the growth direction. This evidence provides important insights for the integration of III-V semiconductor devices, such as heterojunction bipolar transistor, with Si-based substrates.

Original languageEnglish (US)
Article number073710
JournalJournal of Applied Physics
Volume104
Issue number7
DOIs
StatePublished - Oct 22 2008

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Characterization of GaAs grown on SiGe/Si graded substrates using p-n junction diodes'. Together they form a unique fingerprint.

Cite this