Characterization of Er in porous Si

Guido Mula*, Susanna Setzu, Gianluca Manunza, Roberta Ruffilli, Andrea Falqui

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The fabrication of porous Si-based Er-doped light-emitting devices is a very promising developing field for all-silicon light emitters. However, while luminescence of Er-doped porous silicon devices has been demonstrated, very little attention has been devoted to the doping process itself. We have undertaken a detailed study of this process, examining the porous silicon matrix from several points of view during and after the doping. In particular, we have found that the Er-doping process shows a threshold level which, as evidenced by the cross correlation of the various techniques used, does depend on the sample thickness and on the doping parameters.

Original languageEnglish (US)
Pages (from-to)1-22
Number of pages22
JournalNanoscale Research Letters
Volume7
DOIs
StatePublished - Jul 24 2012

Keywords

  • Er doping
  • Light-emitting devices
  • Porous silicon
  • Refractive index

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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