Characteristics of ZnCdSe single-quantum-well laser diodes

A. Tsujimura*, S. Yoshii, S. Hayashi, Kazuhiro Ohkawa, T. Mitsuyu, H. Takeishi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The Cd composition ratio x of the active layer dependence of the lasing wavelength and the temperature dependence of the threshold current were investigated for Zn1-xCdxSe single-quantum-well laser diodes. The lasing wavelengths varied from 477 nm (blue) for x=0.15 to 520 nm (green) for x=0.31 at 77 K. A clear reduction in the threshold current was observed by applying high-reflectivity (HR) facet coating. 90%-90% HR coated devices with x=0.25 lased without arising the carrier leakage up to 250 K under pulsed operation.

Original languageEnglish (US)
Pages (from-to)130-132
Number of pages3
JournalPhysica B: Physics of Condensed Matter
Volume191
Issue number1-2
DOIs
StatePublished - Sep 1 1993

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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