The Cd composition ratio x of the active layer dependence of the lasing wavelength and the temperature dependence of the threshold current were investigated for Zn1-xCdxSe single-quantum-well laser diodes. The lasing wavelengths varied from 477 nm (blue) for x=0.15 to 520 nm (green) for x=0.31 at 77 K. A clear reduction in the threshold current was observed by applying high-reflectivity (HR) facet coating. 90%-90% HR coated devices with x=0.25 lased without arising the carrier leakage up to 250 K under pulsed operation.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering