The authors present a numerical model to study the carrier dynamics of InAs/InP quantum dash (QDash) lasers. The model is based on single-state rate equations, which incorporates both, the homogeneous and the inhomogeneous broadening of lasing spectra. The numerical technique also considers the unique features of the QDash gain medium. This model has been applied successfully to analyze the laser spectra of QDash laser. ©2010 IEEE.
|Original language||English (US)|
|Title of host publication||Numerical Simulation of Optoelectronic Devices|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Number of pages||2|
|State||Published - Sep 2010|