Characteristics of p-type znse layers grown by molecular beam epitaxy with radical doping

Kazuhiro Ohkawa, Takeshi Karasawa, Tsuneo Mitsuyu

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95 Scopus citations

Abstract

p-type ZnSe layers have been grown by molecular beam epitaxy using nitrogen radical doping. We have employed Pt as the electrode material for p-type ZnSe. The Pt electrodes markedly reduced contact resistances. The p-type conduction was confirmed by Hall measurement. Carrier concentration was 4.4 x 1015 cm-3. Hall mobility was as high as 86 cm2/V-s because of good crystallinity. The p-type ZnSe layers exhibited the 2.616-eV emission from recombination between free electrons and acceptor holes (FA) in room-temperature photoluminescence measurement. The FA emission provides evidence that the layers are p-type ZnSe.

Original languageEnglish (US)
Pages (from-to)L152-L155
JournalJapanese Journal of Applied Physics
Volume30
Issue number2
DOIs
StatePublished - Jan 1 1991

Keywords

  • Hall measurement
  • P-type
  • Photoluminescence
  • Pt electrode
  • ZnSe

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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