Characteristics of InGaN quantum wells light-emitting diodes with thin AlGaInN barrier layers

Guangyu Liu*, Jing Zhang, Chee Keong Tan, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The characteristics of InGaN quantum wells light-emitting diodes with thin large bandgap AlGaInN barriers were analyzed with taking into account the carrier transport effect, which resulted in efficiency-droop suppression.

Original languageEnglish (US)
Title of host publication2012 IEEE Photonics Conference, IPC 2012
Pages431-432
Number of pages2
DOIs
StatePublished - 2012
Externally publishedYes
Event25th IEEE Photonics Conference, IPC 2012 - Burlingame, CA, United States
Duration: Sep 23 2012Sep 27 2012

Other

Other25th IEEE Photonics Conference, IPC 2012
CountryUnited States
CityBurlingame, CA
Period09/23/1209/27/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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