Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEM

Y. W. Ho*, V. Ng, W. K. Choi, S. P. Ng, T. Osipowicz, H. L. Seng, W. W. Tjui, Kun Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The high resolution transmission electron microscopy (HRTEM), Rutherford backscattering spectroscopy (RBS) and Raman spectroscopy results of germanium nanocrystals embedded in SiO2 synthesized by rapid thermal annealing (RTA) was presented. HRTEM reveals that annealing temperatures below 800°C produce fewer and smaller Ge nanocrystals compared to those produced at 800°C. Above 800°C, the nanocrystals formed have a wide range of size distribution. Therefore the optimum temperature is at 800°C to have uniformly sized and regularly spaced nanocrystals. RBS was performed to establish the Ge distribution in the SiO2 matrix during annealing.

Original languageEnglish (US)
Pages (from-to)1291-1295
Number of pages5
JournalScripta Materialia
Volume44
Issue number8-9
DOIs
StatePublished - May 18 2001

Keywords

  • Germanium
  • Nanocrystal
  • Raman spectroscopy
  • Rutherford backscattering
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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