Channel hot-carriers degradation in MOSFETs: A conductive AFM study at the nanoscale

A. Bayer, M. Porti, J. Martin-Martinez, M. Lanza, R. Rodriguez, V. Velayudhan, E. Amat, M. Nafria, X. Aymerich, M. B. Gonzalez, E. Simoen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

In this work, the gate stack electrical properties of fresh and channel-hot-carrier (CHC) stressed MOSFETs have been investigated at the nanoscale with a Conductive Atomic Force Microscope (CAFM). For the first time, by measuring on the bare oxide, the CAFM has allowed evaluation of the degradation induced along the channel by a previous CHC stress. In particular, higher gate leakage was measured close to source and drain, which has been related to NBTI and CHC degradation, respectively. © 2013 IEEE.
Original languageEnglish (US)
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
DOIs
StatePublished - Aug 7 2013
Externally publishedYes

Fingerprint

Dive into the research topics of 'Channel hot-carriers degradation in MOSFETs: A conductive AFM study at the nanoscale'. Together they form a unique fingerprint.

Cite this