Challenges in dual workfunction metal gate CMOS integration

Byoung Hun Lee*, Seungchul Song, Muhammad Mustafa Hussain, Raj Jammy

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Technical challenges for various integration schemes including gate first dual metal process, fully silicided gate and replacement gate are discussed. Implementation of dual workfunction metal gate CMOS integration is feasible, but needs more systematic reliability assessment. copyright The Electrochemical Society.

Original languageEnglish (US)
Pages (from-to)263-274
Number of pages12
JournalECS Transactions
Volume3
Issue number2
DOIs
StatePublished - Dec 1 2006
EventAdvanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: Oct 29 2006Nov 3 2006

ASJC Scopus subject areas

  • Engineering(all)

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