Technical challenges for various integration schemes including gate first dual metal process, fully silicided gate and replacement gate are discussed. Implementation of dual workfunction metal gate CMOS integration is feasible, but needs more systematic reliability assessment. copyright The Electrochemical Society.
|Original language||English (US)|
|Number of pages||12|
|State||Published - Dec 1 2006|
|Event||Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting - Cancun, Mexico|
Duration: Oct 29 2006 → Nov 3 2006
ASJC Scopus subject areas