CdSe/ZnSe quantum dot structures: Structural and optical investigations

D. Hommel*, K. Leonardi, H. Heinke, H. Selke, Kazuhiro Ohkawa, F. Gindele, U. Woggon

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

50 Scopus citations

Abstract

Using migration enhanced epitaxy the self-organized formation of CdSe islands on ZnSe in open and overgrown structures has been studied by transmission electron microscopy, high-resolution X-ray diffraction, atomic force microscopy, photoluminescence and excitation spectroscopy. The transition from homogeneous CdSe quantum wells with flat interfaces to fluctuating CdSe films could be observed when exceeding the critical thickness. These interrupted layers contain CdSe quantum dots embedded in Cdl xZnxSe with a concentration gradient. Islands observed on open structures are unstable in time. Their chemical nature is still unclear due to the fact that similar features are obtained on pure ZnSe. First results on other highly lattice mismatched II-VI systems like CdTe/ZnSe and ZnTe/ZnSe will be presented.

Original languageEnglish (US)
Pages (from-to)835-843
Number of pages9
JournalPhysica Status Solidi (B) Basic Research
Volume202
Issue number2
DOIs
StatePublished - Jan 1 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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