Abstract
Metalorganic chemical vapor deposition (MOCVD) growths of linearly-shaped staggered InGaN quantum wells lightemitting diodes are performed. The use of linearly-shaped staggered InGaN QWs leads to the shift of both electron and hole wavefunction toward the center of the quantum well region with enhanced momentum matrix element, which results in the enhancement of the spontaneous radiaitve recombination rate. The power-density-dependent cathodoluminescence measurements for both conventional and linearly-shaped staggered InGaN QW show 2.5-3.5 times increase in the integrated cathodoluminescence intensity by using the novel active region.
Original language | English (US) |
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Title of host publication | Gallium Nitride Materials and Devices VI |
Volume | 7939 |
DOIs | |
State | Published - 2011 |
Externally published | Yes |
Event | Gallium Nitride Materials and Devices VI - San Francisco, CA, United States Duration: Jan 24 2011 → Jan 27 2011 |
Other
Other | Gallium Nitride Materials and Devices VI |
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Country | United States |
City | San Francisco, CA |
Period | 01/24/11 → 01/27/11 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering