Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes

Hongping Zhao; Jing Zhang; Guangyu Liu; Takahiro Toma; Jonathan D. Poplawsky; Volkmar Dierolf; Nelson Tansu

doi:10.1117/12.875002

Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes

Hongping Zhao^*, Jing Zhang, Guangyu Liu, Takahiro Toma, Jonathan D. Poplawsky, Volkmar Dierolf, Nelson Tansu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Metalorganic chemical vapor deposition (MOCVD) growths of linearly-shaped staggered InGaN quantum wells lightemitting diodes are performed. The use of linearly-shaped staggered InGaN QWs leads to the shift of both electron and hole wavefunction toward the center of the quantum well region with enhanced momentum matrix element, which results in the enhancement of the spontaneous radiaitve recombination rate. The power-density-dependent cathodoluminescence measurements for both conventional and linearly-shaped staggered InGaN QW show 2.5-3.5 times increase in the integrated cathodoluminescence intensity by using the novel active region.

Original language	English (US)
Title of host publication	Gallium Nitride Materials and Devices VI
Volume	7939
DOIs	https://doi.org/10.1117/12.875002
State	Published - 2011
Externally published	Yes
Event	Gallium Nitride Materials and Devices VI - San Francisco, CA, United States Duration: Jan 24 2011 → Jan 27 2011

Other

Other	Gallium Nitride Materials and Devices VI
Country	United States
City	San Francisco, CA
Period	01/24/11 → 01/27/11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.875002

Cite this

@inproceedings{49121473b3074b779efae388bcf5e2e8,

title = "Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes",

abstract = "Metalorganic chemical vapor deposition (MOCVD) growths of linearly-shaped staggered InGaN quantum wells lightemitting diodes are performed. The use of linearly-shaped staggered InGaN QWs leads to the shift of both electron and hole wavefunction toward the center of the quantum well region with enhanced momentum matrix element, which results in the enhancement of the spontaneous radiaitve recombination rate. The power-density-dependent cathodoluminescence measurements for both conventional and linearly-shaped staggered InGaN QW show 2.5-3.5 times increase in the integrated cathodoluminescence intensity by using the novel active region.",

author = "Hongping Zhao and Jing Zhang and Guangyu Liu and Takahiro Toma and Poplawsky, {Jonathan D.} and Volkmar Dierolf and Nelson Tansu",

year = "2011",

doi = "10.1117/12.875002",

language = "English (US)",

isbn = "9780819484765",

volume = "7939",

booktitle = "Gallium Nitride Materials and Devices VI",

note = "Gallium Nitride Materials and Devices VI ; Conference date: 24-01-2011 Through 27-01-2011",

}

Zhao, H, Zhang, J, Liu, G, Toma, T, Poplawsky, JD, Dierolf, V & Tansu, N 2011, Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes. in Gallium Nitride Materials and Devices VI. vol. 7939, 793905, Gallium Nitride Materials and Devices VI, San Francisco, CA, United States, 01/24/11. https://doi.org/10.1117/12.875002

Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes. / Zhao, Hongping; Zhang, Jing; Liu, Guangyu; Toma, Takahiro; Poplawsky, Jonathan D.; Dierolf, Volkmar; Tansu, Nelson.

Gallium Nitride Materials and Devices VI. Vol. 7939 2011. 793905.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes

AU - Zhao, Hongping

AU - Zhang, Jing

AU - Liu, Guangyu

AU - Toma, Takahiro

AU - Poplawsky, Jonathan D.

AU - Dierolf, Volkmar

AU - Tansu, Nelson

PY - 2011

Y1 - 2011

N2 - Metalorganic chemical vapor deposition (MOCVD) growths of linearly-shaped staggered InGaN quantum wells lightemitting diodes are performed. The use of linearly-shaped staggered InGaN QWs leads to the shift of both electron and hole wavefunction toward the center of the quantum well region with enhanced momentum matrix element, which results in the enhancement of the spontaneous radiaitve recombination rate. The power-density-dependent cathodoluminescence measurements for both conventional and linearly-shaped staggered InGaN QW show 2.5-3.5 times increase in the integrated cathodoluminescence intensity by using the novel active region.

AB - Metalorganic chemical vapor deposition (MOCVD) growths of linearly-shaped staggered InGaN quantum wells lightemitting diodes are performed. The use of linearly-shaped staggered InGaN QWs leads to the shift of both electron and hole wavefunction toward the center of the quantum well region with enhanced momentum matrix element, which results in the enhancement of the spontaneous radiaitve recombination rate. The power-density-dependent cathodoluminescence measurements for both conventional and linearly-shaped staggered InGaN QW show 2.5-3.5 times increase in the integrated cathodoluminescence intensity by using the novel active region.

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U2 - 10.1117/12.875002

DO - 10.1117/12.875002

M3 - Conference contribution

AN - SCOPUS:79955756858

SN - 9780819484765

VL - 7939

BT - Gallium Nitride Materials and Devices VI

T2 - Gallium Nitride Materials and Devices VI

Y2 - 24 January 2011 through 27 January 2011

ER -

Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes

Abstract

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