Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes

Hongping Zhao*, Jing Zhang, Guangyu Liu, Takahiro Toma, Jonathan D. Poplawsky, Volkmar Dierolf, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Metalorganic chemical vapor deposition (MOCVD) growths of linearly-shaped staggered InGaN quantum wells lightemitting diodes are performed. The use of linearly-shaped staggered InGaN QWs leads to the shift of both electron and hole wavefunction toward the center of the quantum well region with enhanced momentum matrix element, which results in the enhancement of the spontaneous radiaitve recombination rate. The power-density-dependent cathodoluminescence measurements for both conventional and linearly-shaped staggered InGaN QW show 2.5-3.5 times increase in the integrated cathodoluminescence intensity by using the novel active region.

Original languageEnglish (US)
Title of host publicationGallium Nitride Materials and Devices VI
Volume7939
DOIs
StatePublished - 2011
Externally publishedYes
EventGallium Nitride Materials and Devices VI - San Francisco, CA, United States
Duration: Jan 24 2011Jan 27 2011

Other

OtherGallium Nitride Materials and Devices VI
CountryUnited States
CitySan Francisco, CA
Period01/24/1101/27/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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