Cathodoluminescence characteristics of linearly-shaped staggered InGaN quantum wells light-emitting diodes

Hongping Zhao*, Jing Zhang, Takahiro Toma, Guangyu Liu, Jonathan D. Poplawsky, Volkmar Dierolf, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Growths of linearly-graded staggered InGaN quantum wells light-emitting diodes are performed, and the use of this novel active region leads to 2.5-3.5 times increase in output power.

Original languageEnglish (US)
Title of host publication2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Pages532-533
Number of pages2
DOIs
StatePublished - Dec 1 2010
Event23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 - Denver, CO, United States
Duration: Nov 7 2010Nov 11 2010

Publication series

Name2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

Other

Other23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
CountryUnited States
CityDenver, CO
Period11/7/1011/11/10

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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