Catalyst-assisted growth of InGaN NWs for photoelectrochemical water-splitting applications

P. Sundara Venkatesh, G. Paulraj, P. Dharmaraj, V. Purushothaman, K. Jeganathan

Research output: Contribution to journalArticlepeer-review

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Abstract

In this work, we have successfully grown InGaN nanowires by catalyst-assisted chemical vapour deposition technique with high aspect ratio for solar-driven water splitting applications. The band gap of the InGaN nanowires has been tuned to absorb a wide range of visible parts of electromagnetic spectrum by optimizing the composition of In:Ga. The photoelectrochemical analysis has been carried out for InGaN nanowires and that evidences the significant solar oxygen evolution reaction with a small onset potential of 0.234 V vs. reversible hydrogen electrode. From the analysis, it has been witnessed the maximum applied bias to photo-conversion efficiency of ~ 1% at the applied bias of 0.63 V vs. reversible hydrogen electrode. Moreover, the ultra-long stability of InGaN nanowires has been evidenced by 3000 s with a flat current density of 0.43 mA/cm2 in chronoamperometry analysis.
Original languageEnglish (US)
JournalIonics
DOIs
StatePublished - Feb 13 2020

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