Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer

Li Chen, Yijun Dai, Liang Li, Jiean Jiang, Houqiang Xu, Kuang-Hui Li, Tien Khee Ng, Mei Cui, Wei Guo, Haiding Sun, Jichun Ye

Research output: Contribution to journalArticlepeer-review

Abstract

In this work, we report a significantly boosted defect-insensitive ultraviolet emission from InGaN/GaN multiple quantum wells (MQWs) grown on patterned AlN nucleation layer (NL) compared to samples grown on uniform NL. Carrier localization is clearly illustrated for MQWs grown on patterned AlN NL as evidenced by an S-shape profile from temperature-dependent photoluminescence characterization. The underlying mechanism for the carrier localization is demonstrated to correlate with partial relaxation of compressive strains inside epitaxial thin films. This work illustrates that carrier localization can be achieved in MQWs with very low indium content by the adoption of patterned NL during growth, and provides a promising route towards the realization of high-efficiency ultraviolet emitter.
Original languageEnglish (US)
Pages (from-to)157589
JournalJournal of Alloys and Compounds
Volume861
DOIs
StatePublished - Oct 15 2020

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