Carrier dynamics of InxGa1-xN/GaN multiple quantum wells grown on (−201) β-Ga2O3 for bright vertical light emitting diodes

Mufasila Mumthaz Muhammed, Jian Xu, Nimer Wehbe, Iman S. Roqan

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

High-quality InxGa1-xN/GaN multi-quantum well (MQW) structures (0.05≤x≤0.13), are successfully grown on transparent and conductive (−201)-oriented β-Ga2O3 substrate. Scanning-transmission electron microscopy and secondary ion mass spectrometry (SIMS) show well-defined high quality MQWs, while the In and Ga compositions in the wells and the barriers are estimated by SIMS. Temperature-dependant Photoluminescence (PL) confirms high optical quality with a strong bandedge emission and negligble yellow band. time-resolved PL measurements (via above/below-GaN bandgap excitations) explain carrier dynamics, showing that the radiative recombination is predominant. Our results demonstrate that (−201)-oriented β-Ga2O3 is a strong candidate as a substrate for III-nitride-based vertical- emitting devices.
Original languageEnglish (US)
Pages (from-to)14869
JournalOptics Express
Volume26
Issue number12
DOIs
StatePublished - May 29 2018

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